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  dimensions in inches and (millimeters) .016(0.4) .008(0.2) .059(1.5) .055(1.4) .142(3.6) .134(3.4) .016(0.4) .008(0.2) cathode mark maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. BZV55C2V4 thru dl-35 rectifier specialists r dc components co., l td. technical specifica tions of glass silicon zener diodes features * voltage range:2.4v to 39v bzv55c 39 symbol value units zener current see table "characterisitics" power dissipation at t amb=25 o c ptot 500 (1) mw junction t emperature tj 175 o c storage t emperature range t stg -55 to + 175 o c k/mw thermal resistance rtha - typ. junction to ambient air - min. 0.3 (1) max. volts forward voltage v f - typ. at if=100ma - min. 1 max. 1)valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. note: standard zener voltage tolerance 5% mechanical data * case: glass sealed case * mounting position: any * weight: 0.05 gram * double slug type construction * terminals:solder plated, solderable per mil-std-750, method 2026 * polarity: color band denotes cathode end
breakdown characteristics bzv55- series ma 50 40 30 20 10 0 5v 10v 15v 20v 25v 30v iz vz 27 24 22 20 15 12 11 9v1 6v8 6v2 5v6 5v1 4v7 4v3 3v9 3v3 2v4 r dc components co., l td. rating and characteristic curves (bzv55c series) BZV55C2V4 2.28 2.56 5 85 600 1 50 1 -0.085 155 bzv55c2v7 2.5 2.9 5 85 600 1 10 1 -0.080 135 bzv55c2v0 2.8 3.2 5 85 600 1 4 1 -0.075 125 bzv55c3v3 3.1 3.5 5 85 600 1 2 1 -0.070 1 15 bzv55c3v6 3.4 3.8 5 85 600 1 2 1 -0.065 105 bzv55c3v9 3.7 4.1 5 85 600 1 2 1 -0.060 95 bzv55c4v3 4.0 4.6 5 75 600 1 1 1 0.055 90 bzv55c4v7 4.4 5.0 5 60 600 1 0.5 1 0.030 85 bzv55c5v1 4.8 5.4 5 35 550 1 0.1 1 0.030 80 bzv55c5v6 5.2 6.0 5 25 450 1 0.1 1 +0.038 70 bzv55c6v2 5.8 6.6 5 10 200 1 0.1 2 +0.045 64 bzv55c6v8 6.4 7.2 5 8 150 1 0.1 3 +0.050 58 bzv55c7v5 7.0 7.9 5 7 50 1 0.1 5 +0.058 53 bzv55c8v2 7.7 8.7 5 7 50 1 0.1 6.2 +0.062 74 bzv55c9v1 8.5 9.6 5 10 50 1 0.1 6.8 +0.068 43 bzv55c10 9.4 10.6 5 15 70 1 0.1 7.5 +0.075 40 bzv55c11 10.4 11.6 5 20 70 1 0.1 8.2 +0.076 36 bzv55c12 11.4 12.7 5 20 90 1 0.1 9.1 +0.077 32 bzv55c13 12.4 14.1 5 26 110 1 0.1 10 +0.079 29 bzv55c15 13.8 15.6 5 30 110 1 0.1 11 +0.082 27 bzv55c16 15.3 17.1 5 40 170 1 0.1 12 +0.083 24 bzv55c18 16.8 19.1 5 50 170 1 0.1 12 +0.085 21 bzv55c20 18.8 21.2 5 55 220 1 0.1 15 +0.086 20 bzv55c22 20.8 23.3 5 55 220 1 0.1 16 +0.087 18 bzv55c24 22.8 25.6 5 80 220 1 0.1 18 +0.088 16 bzv55c27 25.1 28.9 5 80 220 1 0.1 20 +0.090 14 bzv55c30 28 32 5 80 220 1 0.1 22 +0.091 13 bzv55c33 31 35 5 80 220 1 0.1 24 +0.092 12 bzv55c36 34 38 5 80 220 1 0.1 27 +0.093 1 1 bzv55c39 37 41 2.5 90 500 0.5 0.1 30 +0.094 10 nominal zener voltage vz@izt min max zener test current izt ma maximum zener impedance zzt@izt zzt@izk ohms ohms izk ma maximum reverse leakage current ir @vr ua volts typical temperature coefficient % / o c maximum regulator current izm ma test current iz 5ma changes in the power dissipation due to the ambient temperature. 500 400 300 200 100 pd(mw) t a( o c) 50 100 150 200 300 ambient temperature. power dissipation


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